Improvement Of Stress-Induced Surface Microroughness For Highly Reliable Gate Oxide

Improvement Of Stress-Induced Surface Microroughness For Highly Reliable Gate Oxide

Author(s):

Publication title:

Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1994-16

Pub. Year:

1994

Page(from):

163

Page(to):

169

Pages:

7

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770484 [1566770483]

Language:

English

Call no.:

E23400/942240

Type:

Conference Proceedings

Details

TDL ID:	ZA00014125
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Conf. info. (Number):	3rd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.05.23-1994.05.27

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