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The potential and restrictions of the double derivative method for threshold voltage extraction in SOI MOSFET's

Author(s):
Publication title:
Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
1994-11
Pub. Year:
1994
Page(from):
318
Page(to):
323
Pages:
6
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770439 [1566770432]
Language:
English
Call no.:
E23400/941388
Type:
Conference Proceedings

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