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N+ -P JUNCTION LEAKAGE CURRENT GENERATED BY MICRO- DEFECTS IN DENUDED ZONE OF 64Mb DRAM SILICON SUBSTRATES

Author(s):
Publication title:
Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
1994-10
Pub. Year:
1994
Page(from):
987
Page(to):
996
Pages:
10
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770422 [1566770424]
Language:
English
Call no.:
E23400/941387
Type:
Conference Proceedings

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