KINETICS OF DOPANT PRECIPITATION IN SILICON

KINETICS OF DOPANT PRECIPITATION IN SILICON

Author(s):: Dunham, S.T.
Publication title:: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology
Title of ser.:: Electrochemical Society Proceedings Series
Ser. no.:: 1994-10
Pub. Year:: 1994
Page(from):: 711
Page(to):: 719
Pages:: 9
Pub. info.:: Pennington, NJ: Electrochemical Society
ISSN:: 01616374
ISBN:: 9781566770422 [1566770424]
Language:: English
Call no.:: E23400/941387
Type:: Conference Proceedings

Details

TDL ID:	ZA00014119
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon Materials Science and Technology
Conf. info. (Number):	7th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.05.23-1994.05.27

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