FORMATION OF INTERSTITIAL OXYGEN STRIATIONS IN CZ GROWN SILICON SINGLE CRYSTALS

FORMATION OF INTERSTITIAL OXYGEN STRIATIONS IN CZ GROWN SILICON SINGLE CRYSTALS

Author(s):

Publication title:

Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1994-10

Pub. Year:

1994

Page(from):

148

Page(to):

155

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770422 [1566770424]

Language:

English

Call no.:

E23400/941387

Type:

Conference Proceedings

Details

TDL ID:	ZA00014119
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon Materials Science and Technology
Conf. info. (Number):	7th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.05.23-1994.05.27

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