COMPARISON OF IN SITU, ISOTROPIC DOWNSTREAM, AND INDUCTIVELY COUPLED PLASMA DOWNSTREAM POST-CONTACT ETCH CLEANING
- Author(s):
- Publication title:
- Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 1994-7
- Pub. Year:
- 1994
- Page(from):
- 307
- Page(to):
- 312
- Pages:
- 6
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566770385 [1566770386]
- Language:
- English
- Call no.:
- E23400/941397
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
Materials Research Society |
MRS - Materials Research Society |
8
Conference Proceedings
Isotropic nitride etching for thin nitride barrier self-aligned contact (TNBSAC) in an inductively coupled plasma chemical etcher
SPIE-The International Society for Optical Engineering |
3
Conference Proceedings
Damage Resulting from Polysilicon Gate Etching: Effect of Electrode Age and Sequencing within a Cassette
Electrochemical Society |
MRS - Materials Research Society |
4
Conference Proceedings
Electrical Characterization of Damage Phenomena Induced in Silicon by Magnetically-Enhanced Reactive Ion Etching
Electrochemical Society |
10
Conference Proceedings
Application of Microwave Downstream Plasma for Cleaning: Post Via-Etch Residue Removal
Electrochemical Society |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
SPIE - The International Society for Optical Engineering |