The Effects of V/III Ratio on Optical, Electrical, and Structural Properties of InAs0.3Sb0.7 Grown by LP-MOCVD

The Effects of V/III Ratio on Optical, Electrical, and Structural Properties of InAs0.3Sb0.7 Grown by LP-MOCVD

Author(s):

Publication title:

Proceedings of the first International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications and the nineteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XIX)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1994-5

Pub. Year:

1994

Page(from):

153

Page(to):

159

Pages:

7

Pub. info.:

Pennington, NJ.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770347 [1566770343]

Language:

English

Call no.:

E23400/950353

Type:

Conference Proceedings

Details

TDL ID:	ZA00014115
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications ; SOTAPOCS
Conf. info. (Number):	1st ; 19th
Conf. info. (Venue):	New Orleans, LA, USA
Conf. info. (Date):	1993.10.10-1993.10.15

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