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Reliability Issues due to Hot-Electron Effects in GaAs-Based MESFET's and HEMT's

Author(s):
Publication title:
Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
1994-1
Pub. date:
1994
Page(from):
111
Page(to):
124
Pages:
14
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770378 [1566770378]
Language:
English
Call no.:
E23400/941393
Type:
Conference Proceedings

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