Strain Reduction in GaAs Epilayers on Si by the Control of Thermally Introduced Misfit Dislocations

Strain Reduction in GaAs Epilayers on Si by the Control of Thermally Introduced Misfit Dislocations

Author(s):

Publication title:

Proceedings of the Symposium on Logic and Functional Devices for Photonics and the seventeenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVII)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1993-10

Pub. Year:

1993

Page(from):

237

Page(to):

245

Pages:

9

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770545 [1566770548]

Language:

English

Call no.:

E23400/932025

Type:

Conference Proceedings

Details

TDL ID:	ZA00014099
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Logic and Functional Devices for Photonics ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	1992 ; 17th ; 182nd
Conf. info. (Venue):	Toronto, Ontario, Canada
Conf. info. (Date):	1992.10.11-1992.10.16

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