COMPARATIVE STUFY OD SIMULATED DAMAGE ACCUMULATION IN SILICON CRYSTALS
- Author(s):
- Publication title:
- Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 1993-6
- Pub. Year:
- 1993
- Page(from):
- 545
- Page(to):
- 555
- Pages:
- 11
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566770644 [1566770645]
- Language:
- English
- Call no.:
- E23400/930578
- Type:
- Conference Proceedings
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