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MODELS FOR THE PHYSICAL EXETEN OF POINT DEFECT INTER ACTIONS IN SILICON

Author(s):
Publication title:
Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
1993-6
Pub. date:
1993
Page(from):
149
Page(to):
158
Pages:
10
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770644 [1566770645]
Language:
English
Call no.:
E23400/930578
Type:
Conference Proceedings

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