MODELS FOR THE PHYSICAL EXETEN OF POINT DEFECT INTER ACTIONS IN SILICON

MODELS FOR THE PHYSICAL EXETEN OF POINT DEFECT INTER ACTIONS IN SILICON

Author(s):

Publication title:

Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1993-6

Pub. date:

1993

Page(from):

149

Page(to):

158

Pages:

10

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770644 [1566770645]

Language:

English

Call no.:

E23400/930578

Type:

Conference Proceedings

Details

TDL ID:	ZA00014095
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Process Physics and Modeling in Semiconductor Technology ; Spring Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 1993
Conf. info. (Venue):	Honolulu, Hawaii. USA
Conf. info. (Date):	1993.05.19-1993.05.21

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