Blank Cover Image

Electrical Characterization of HfO xN y Gate Dielectric with Different Nitrogen Concentration Profiles Formed by Rapid Thermal Annealing

Author(s):
Publication title:
Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-01
Pub. Year:
2004
Page(from):
286
Page(to):
291
Pages:
6
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774062 [1566774063]
Language:
English
Call no.:
E23400/200401
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Electrical Properties and the Reliability of Silicon Nitride Gate Dielectrics Formed by Various Processes and Annealing Treatments

Chang-Liao, K-S., Pan, J.Y, Cheng, C.L., Wang, T.K

Electrochemical Society
7 Conference Proceedings Electrical and physical characterization of ultrathin silicon oxynitride gate dielectric films formed by the jet vapor deposition technique

Karamcheti, A., Watt, V. H. C., Luo, T. Y., Brady, D., Shaapur, F., Vishnubhotla, L., Gale, G., Huff, H. R., Jackson, M. …

MRS-Materials Research Society
2 Conference Proceedings Chemical dry cleaning and pretreatment on the electrical and reliability characteristic of high-k gate dielectrics in MOS device (Invited Paper)

Cheng, C.-L., Wang, T.-K., Chang-Liao, K.-S.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings Ohmic contacts to GaN with rapid thermal annealing

Chi,L.W., Lam,K.T., Kao,Y.K., Juang,F.-S., Tasi,Y.S., Su,Y.K., Chang,S.-J., Chen,C.C., Sheu,J.K.

SPIE - The International Society for Optical Engineering
3 Conference Proceedings 41 Interstitial Oxygen Defect at Si Surface on Electrical Characteristics of High-K Gated MOS Devices

Chang-Liao, K. S., Cheng, C. L., Wang, T. K.

Electrochemical Society
9 Conference Proceedings Nitrogen Incorporation and High Temperature Forming Gas Anneal For High-K Gate Dielectrics

J. C. Lee, R. Choi, K. Onishi, N. Cho, C. Kang, Y. Kim, S. Krishnan

Electrochemical Society
4 Conference Proceedings Integration of Hfx Tay N Metal Gate Electrode with High-k Gate Dielectric in MOS Devices

K. Chang-Liao, C. Cheng, T. Wang, Y. Wang

Electrochemical Society
10 Conference Proceedings Effects of Nitrogen in HfO2 Gate Dielectric on the Electrical and Reliability Characteristics by Ns plasma

Kim, J. -H., Choi, K. -J., Yoon, S. -G.

Electrochemical Society
5 Conference Proceedings Effects of Arsenic Concentration Profile on Electric Properties of Gate Oxide in MOS Devices

Chang-Liao, K.-S., Chuang, C.-S.

Electrochemical Society
11 Conference Proceedings DyScHfOx as High-k Gate Dielectrics: Structural and Electrical Properties

C. Adelmann, S. Van Elshocht, P. Lehnen, T. Canard, A. Franquet, C. Zhao, L. Ragnarsson, V. Chang, H. Choi, Y. Hong-Yu, …

Electrochemical Society
6 Conference Proceedings Effects of the Defects at HfOxNy/Si Interface on Electrical and Reliability Charucteristics of MOS Devices

K. Chang-Liao, C. L. Cheng, C. Y. Lu, C. H. Huang, S. H. Wang, T. K. Wang

Electrochemical Society
12 Conference Proceedings Characterization of Metal/AlxIn1-xN Interface Thermal Stability and Electrical Properties

Qiu, Guohua, Chen, Fen, Olowolafe, J. O., Swann, C. P., Unruh, K. M., Holmes, D. S.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12