Formation and Characterization of NiSi-Silicided n+-p Shallow Junctions Using Implantation Through Sulcide and Low Temperature Furnace Annealing

Formation and Characterization of NiSi-Silicided n+-p Shallow Junctions Using Implantation Through Sulcide and Low Temperature Furnace Annealing

Author(s):

Publication title:

Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2004-01

Pub. Year:

2004

Page(from):

183

Page(to):

190

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774062 [1566774063]

Language:

English

Call no.:

E23400/200401

Type:

Conference Proceedings

Details

TDL ID:	ZA00014089
Series ID:	PA00000028
Conf. info. (Name):	International symposium an advanced short-time thermal processing for Si-based CMOS devices ; Meeting of the Electrochemical Socity
Conf. info. (Number):	2nd ; 205th
Conf. info. (Venue):	San Antonio, TX, USA
Conf. info. (Date):	2004.05.10-2004.05.12

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