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Determination of band offsets of Al2O3, ZrO2, HfO2, TiO2, Ta2O5, Nb2O5.

Author(s):
Publication title:
Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-22
Pub. Year:
2003
Page(from):
115
Page(to):
130
Pages:
16
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774055 [1566774055]
Language:
English
Call no.:
E23400/200322
Type:
Conference Proceedings

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