35 Rapid thermal process Atomic Layer Deposition of high dielectric constant ultrathin ZrO2 for sub-65 nm silicon CMOS technology

35 Rapid thermal process Atomic Layer Deposition of high dielectric constant ultrathin ZrO2 for sub-65 nm silicon CMOS technology

Author(s):

Publication title:

Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-14

Pub. Year:

2003

Page(from):

281

Page(to):

294

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773966 [1566773962]

Language:

English

Call no.:

E23400/200314

Type:

Conference Proceedings

Details

TDL ID:	ZA00014078
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Advanced short-time thermal processing for Si-based CMOS devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	2003 ; 203rd
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.27-2003.04.30

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