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GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates

Author(s):
Irokawa, Y.
Luo, B.
Kim, Jihyun
Kang, B.S.
LaRoche, J.R.
Ren, F
Pan, C.-C.
Chen, G.T.
Chyi, J.-I.
Park, S.S.
Park, Y.J.
Gila, B.P.
Abernathy, C.R.
Balk, K.H.
Pearton, S.J.
10 more
Publication title:
State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-11
Pub. date:
2003
Page(from):
306
Page(to):
320
Pages:
15
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773911 [1566773911]
Language:
English
Call no.:
E23400/200311
Type:
Conference Proceedings

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