The Effect of External Strain on the Conductivity of AIGaN/GaN High Electron Mobility Transistors

State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-11

Pub. Year:

2003

Page(from):

292

Page(to):

297

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773911 [1566773911]

Language:

English

Call no.:

E23400/200311

Type:

Conference Proceedings

Details

TDL ID:	ZA00014075
Series ID:	PA00000028
Conf. info. (Name):	State-Of-The-Art Program on Compound Semiconductors - SOTAPOCS ; Symposium on Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics ; Meeting of the Electrochemical Society
Conf. info. (Number):	39th ; 4th ; 204th
Conf. info. (Venue):	Orlando, Florida, USA
Conf. info. (Date):	2003.10.12-2003.10.17

Similar Items:

1 Conference Proceedings AIGaN Power Rectifiers * Pearton, S.J., Kim, J., Ren, F., Baik, K, Gila, B.P., Abernathy, C.R., Irokawa, Y., Chyi, J-I., Park, S.S., Park, Y.J. Electrochemical Society	7 Conference Proceedings SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors Johnson, J.W., Gila, B.P., Luo, B., Lee, K.P., Abernathy, C.R., Pearton, S.J., Chyi, J.I., Nee, T.E., Lee, C.M., Chuo, … Electrochemical Society
2 Conference Proceedings GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates Irokawa, Y., Luo, B., Kim, Jihyun, Kang, B.S., LaRoche, J.R., Ren, F, Pan, C.-C., Chen, G.T., Chyi, J.-I., Park, S.S., … Electrochemical Society	8 Conference Proceedings GaN Metal Oxide Semiconductor Field Effect Transistors Ren, F., Pearton, S.J., Abernathy, C.R., Baca, A.G., Cheng, P., Han, J., Shul, R.J., Chu, S.N.G., Hong, M., Lothian, … Electrochemical Society
3 Conference Proceedings Effect of Proton Radiation on dc And rf Performance of AIGaN/GaN HEMTs Kim, J., Gila, B.P., Mehandnj, R., Johnson, J.W., Shin, J.H., Lee, K.P., Luo, B., Onstine, A., Abernathy, C.R., Pearton, … Electrochemical Society	9 Conference Proceedings Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics Gila, B.P., Luo, B., Kim, J., Mehandru, R., LaRoche, J.R., Onstine, A.H., Abernathy, C.R., Ren, F., Pearton, S.J. Electrochemical Society
4 Conference Proceedings GaN Power Devices Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cac, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., … Electrochemical Society	10 Conference Proceedings Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on GaN by Plasma Assisted Gas Source Molecular Beam Epitaxy Onstine, A.H., Gila, B.P., Kim, J., Stodilka, D., Allums, K., Abernathy, C.R., Ren, F., Pearton, S.J. Materials Research Society
5 Conference Proceedings DC Characteristics of AIGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates Irokawa, Y., Luo, B., Ren, F., Pan, C-C., Chen, G.-T., Chyi, J.I., Park, S.S., Park, Y.J., Pearton, S.J. Electrochemical Society	11 Conference Proceedings Growth of MgCaO on GaN Onstine, A.H., Gila, B.P., Kim, J., Herrero, A., Mehandru, R., Abernathy, C.R., Ren, B.F., Pearton, S.J. Electrochemical Society
6 Conference Proceedings Novel Oxides and Reliability for the Passivation of AlGaN/GaN High Electron Mobility Transistor Gila, B., Onstine, A.H., Hlad, M, Gerger, A., Herrero, A., Allums, K.K., Stodilka, D., Jang, S., Kang, S., Anderson, T., … Electrochemical Society	12 Conference Proceedings Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination Stodilka, D.O., Gila, B.P., Abernathy, C.R., Lambers, E., Ren, F., Pearton, S.J. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12