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The Effect of External Strain on the Conductivity of AIGaN/GaN High Electron Mobility Transistors

Author(s):
Kang, B.S.
Kim, S.
Kim, J.
Ren, F.
Baik, K.
Pearton, S.J.
Gila, B.P.
Abernathy, C.R.
Pan, C.-C.
Chen, G.-T.
Chyi, J.-I.
Chandrasekaran, V.
Sheplak, M.
Nishida, T.
Chu, S.N.G.
10 more
Publication title:
State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-11
Pub. date:
2003
Page(from):
292
Page(to):
297
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773911 [1566773911]
Language:
English
Call no.:
E23400/200311
Type:
Conference Proceedings

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