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Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics

Author(s):
Gila, B.P.
Luo, B.
Kim, J.
Mehandru, R.
LaRoche, J.R.
Onstine, A.H.
Abernathy, C.R.
Ren, F.
Pearton, S.J.
4 more
Publication title:
State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-11
Pub. date:
2003
Page(from):
212
Page(to):
223
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773911 [1566773911]
Language:
English
Call no.:
E23400/200311
Type:
Conference Proceedings

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