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Dramatic Improvements in AIGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment

Author(s):
Moser, N.
Fitch, R.
Via, D.
Crespo, A.
Yannuzzi, M.
Jessen, G.
Gillespie, J.
Luo, B.
Ren, F.
Abernathy, C.
Pearton, S.
Gila, B.
7 more
Publication title:
State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-11
Pub. date:
2003
Page(from):
57
Page(to):
67
Pages:
11
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773911 [1566773911]
Language:
English
Call no.:
E23400/200311
Type:
Conference Proceedings

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