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The Effect of Nitrogen Concentration at Silicon Oxynitride Gate Insulators Formed by 28N2+ Implantation into Silicon with Additional Conventional or Rapid Thermal Oxidation

Author(s):
Felicio, A.G.
Diniz, J.A.
Godoy Fo., J.
Doi, I.
Pudeozi, M.A.A.
Swart, J.W.
1 more
Publication title:
Microelectronics technology and devices : SBMICRO 2003 : proceedings of the eighteenth international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-9
Pub. Year:
2003
Page(from):
250
Page(to):
258
Pages:
9
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773898 [156677389X]
Language:
English
Call no.:
E23400/200309
Type:
Conference Proceedings

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