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Comparison Between the Leakage Drain Current Behavior in SOI pMOSFETs and SOI nMOSFETs Operating at 300℃

Author(s):
Publication title:
Microelectronics technology and devices : SBMICRO 2003 : proceedings of the eighteenth international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-9
Pub. date:
2003
Page(from):
87
Page(to):
94
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773898 [156677389X]
Language:
English
Call no.:
E23400/200309
Type:
Conference Proceedings

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