An Improved Current Model for Edgeless SOI MOSFETS

An Improved Current Model for Edgeless SOI MOSFETS

Author(s):

Publication title:

Microelectronics technology and devices : SBMICRO 2003 : proceedings of the eighteenth international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-9

Pub. Year:

2003

Page(from):

68

Page(to):

76

Pages:

9

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773898 [156677389X]

Language:

English

Call no.:

E23400/200309

Type:

Conference Proceedings

Details

TDL ID:	ZA00014073
Series ID:	PA00000028
Conf. info. (Name):	SBMICRO
Conf. info. (Number):	18th (2003)
Conf. info. (Venue):	Sao Paulo, Brazil
Conf. info. (Date):	2003.09.08-2003.09.11

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