Cu Barrier Property of Low-K SiOCH Film with k = 3.5 Deposited by PE-CVD Using HMDSO and N2O Gases

Cu Barrier Property of Low-K SiOCH Film with k = 3.5 Deposited by PE-CVD Using HMDSO and N2O Gases

Author(s):

Publication title:

Chemical vapor deposition XVI and EUROCVD 14 : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-8

Pub. Year:

2003

Page(from):

1239

Page(to):

1246

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773782 [1566773784]

Language:

English

Call no.:

E23400/200308

Type:

Conference Proceedings

Details

TDL ID:	ZA00014072
Series ID:	PA00000028
Conf. info. (Name):	International Conference on Chemical Vapor Deposition ; EUROCVD ; Electrochemical Society Meeting
Conf. info. (Number):	16th ; 14th ; 203rd
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.27-2003.05.02

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