The Crystallization Behavior and Interfacial Reaction of Ge2Sb2Te5 Thin Films Between Dielectric Material for the Application to the Phase Change Memory

The Crystallization Behavior and Interfacial Reaction of Ge2Sb2Te5 Thin Films Between Dielectric Material for the Application to the Phase Change Memory

Author(s):

Publication title:

ULSI Process Integration : proceedings of the International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-6

Pub. Year:

2003

Page(from):

159

Page(to):

162

Pages:

4

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773768 [1566773768]

Language:

English

Call no.:

E23400/200306

Type:

Conference Proceedings

Details

TDL ID:	ZA00014069
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on ULSI Process Integration ; Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 203rd
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.28-2003.05.02

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