Steady-state characterization of partially depleted SOI CMOS gates

Steady-state characterization of partially depleted SOI CMOS gates

Author(s):

Publication title:

Silicon-on-insulator technology and devices XI : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-5

Pub. Year:

2003

Page(from):

499

Page(to):

504

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773751 [156677375X]

Language:

English

Call no.:

E23400/200305

Type:

Conference Proceedings

Details

TDL ID:	ZA00014068
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	11th ; 203rd
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.28-2003.05.02

Similar Items:

1 Conference Proceedings Validation of Extracted High Frequency Small Signal Parameters on SOI devices Bracale, A., Ferlet-Cavrojs, V., Fel, N., Gautier, J.L., Pelloje, J.L., du Port dc Poncharra, J. Electrochemical Society	7 Conference Proceedings Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors M. Galeti, J. A. Martino, E. R. Simoen, C. L. Claeys Electrochemical Society
2 Conference Proceedings Comparison Between Harmonic Distortion in Circular Gate and Conventional SOI nMOSFET Using 0.13 µm Partially-Depleted SOI CMOS Technology L.P. Dantas, S.P. Gimenez Electrochemical Society	8 Conference Proceedings DC and AC models of partially-depleted SOI MOSFETs in weak inversion Tomaszewski, D., Domanski, K., Lukasiak, L., Zareba, A., Gibki, J., Jakubowski, A. Kluwer Academic Publishers
3 Conference Proceedings Radiation damage in deep submicron partially depleted SOI CMOS Simoen, E., Rafi, J.M., Mercha, A., Serra-Gallifa, X., van Meer, H., De Meyer, K., Claeys, C., Kokkoris, M., … Electrochemical Society	9 Conference Proceedings Degradation of Deep Submicron Partially Depleted SOI CMOS iransistors tinder MEV Proton or Gamma Irradiation Simoen, E., Rafi, J.M., Mercha, A., De Meyer, K., Claeys, C., Kokkoris, M., Kossionides, E., Fanourakis, G., … Electrochemical Society
4 Conference Proceedings Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point L.M. Camillo, J.A. Martino, E. Simoen, C. Claeys Electrochemical Society	10 Conference Proceedings Back-gate induced noise overshoot in partially-depleted SOI MOSFETs Lukyanchikova, N., Garbar, N., Smolanka, A., Simoen, E., Claeys, C. Kluwer Academic Publishers
5 Conference Proceedings Comparison of partially and fully depleted SOI transistors down to the sub 50-nm-gate length regime Dreeskornfeld, L., Hartwich, J., Landgraf, E., Luyken, R.J., Roesner, W., Schulz, T., Staedele, M., Schmitt-Landsiedel, … Electrochemical Society	11 Conference Proceedings Measurement of generation lifetime in partially depleted SOI MOSFETs Shin, H C, Racanelli, M, Huang, W M, Ford, J, Foersiner, J, Shin, H, Wetteroth, T, Hong, S Q, Wilson, S R, Schroder, D … Electrochemical Society
6 Conference Proceedings Early Voltage Behavior in Circular Gate SOI nMOSFET Using 0.13 μm Partially-Depleted SOI CMOS Technology Salvador Pinillos Gimenez, Rodrigo Mazzutti, Gomes Ferreira, João Antonio Martino Electrochemical Society	12 Conference Proceedings Poly Gate Depletion Effect on Deep Submicrometer CMOS Ye, Q., Limb, Y., Berry, W., Li, Y., Do Thanh, L., Rengarajan, R., Tonti, W. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12