Blank Cover Image

Saturation current model for the n-channel G4-FET

Author(s):
Publication title:
Silicon-on-insulator technology and devices XI : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-5
Pub. date:
2003
Page(from):
367
Page(to):
372
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773751 [156677375X]
Language:
English
Call no.:
E23400/200305
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Total-dose radiation hardness of the SOI 4-gate transistor (G4-FET)

Akarvardar, K., Cristoloveanu, S., Schrimpf, R.D., Dufrene, B., Gentil, P., Blalock, B.J., Mojarradi, M.M.

Electrochemical Society
7 Conference Proceedings Evaluation and Comparison of Various Silicon-On-Sapphire (SOS) Materials using the Pseudo-MOSFET Technique

Hefyene, N., Cristoloveanu, S., Ghibaudo, G., Matsui, M., Yasujima, A.

Electrochemical Society
2 Conference Proceedings Investigation of Drain Current Saturation in 4H-SiC MOSFETs

G. Pennington, S. Potbhare, N. Goldsman, D. Habersat, A. Lelis, J.M. McGarrity, C. Ashman

Trans Tech Publications
8 Conference Proceedings Corner and coupling effects in multiple-gate FETs

Ritzenthaler, R., Faynot, O., Jahan, C., Cristoloveanu, S.

Electrochemical Society
3 Conference Proceedings Modelling the Back-Gate Coupling effect in Triple-, Π- and Ω-Gate FETs

R. Rilzenthaler, M. Gaillardin, K. Akarvardar, O. Faynot, C. Jahan, S. Cristoloveanu

Electrochemical Society
9 Conference Proceedings DRY ETCHING OF Ta-Si-N DIFFUSION BARRIER MATERIAL IN CF4+O2 GAS MIXTURES

McLane, G. F., Casas, L., Reid, J. S., Kolawa, E., Nicolet, M-A.

MRS - Materials Research Society
4 Conference Proceedings Investigation of Trapping Properties in SIMOX Films by Photo-Irrduced Current Transient Spectroscopy

Papioannou,G., Ioannou-Sougleridis,V., Cristoloveanu,S., Bruel,M., Hemment,P.

Trans Tech Publications
10 Conference Proceedings Airbridge-Gate InGaP/InxGa1-xAs FET's With V-Shape Doped Channel

Lour, W.S., Lia, C.Y., Hsieh, J.L., Huang, G.L., Wu, M.Y.

Electrochemical Society
5 Conference Proceedings (3.5) 5:00 - 5:20 PM - Mobility Enhancement in Compressively Strained SiGe Surface Channel pMOS(FET) with HfO2/TiN Gate Stack

Jin, B., Datta, S., Dewey, G., Doczy, M., Doyle, B.S., Johnson, K., Kavalieros, J., Metz, M., Zelick, N., Chau, …

Electrochemical Society
11 Conference Proceedings Similarity relation for I-V characteristics of FETs with different channel shape

Dobrovolsky, V.N., Balucani, M., Ferrari, A.

Kluwer Academic Publishers
6 Conference Proceedings Saturation of receptor currents accounts for two-tone suppression

Yates K. G., Geisler D. C., patuzzi B. R., Johnstone M. B.

Plenum Press
12 Conference Proceedings MODELLING AND CHARACTERIZATION OF SUBMICRON P-CHANNEL MOSFET’s LOCALLY DEGRADED BY HOT CARRIER INJECTION

Hassein-Bey, A., Cristoloveanu

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12