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Comparison of partially and fully depleted SOI transistors down to the sub 50-nm-gate length regime

Author(s):
Dreeskornfeld, L.
Hartwich, J.
Landgraf, E.
Luyken, R.J.
Roesner, W.
Schulz, T.
Staedele, M.
Schmitt-Landsiedel, D.
Risch, L.
4 more
Publication title:
Silicon-on-insulator technology and devices XI : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-5
Pub. date:
2003
Page(from):
361
Page(to):
366
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773751 [156677375X]
Language:
English
Call no.:
E23400/200305
Type:
Conference Proceedings

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