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Modeling of Coulomb scattering of electrons in ultrathin 355 symmetrical DG SOI transistor

Author(s):
Publication title:
Silicon-on-insulator technology and devices XI : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-5
Pub. Year:
2003
Page(from):
355
Page(to):
360
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773751 [156677375X]
Language:
English
Call no.:
E23400/200305
Type:
Conference Proceedings

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