DC Characteristics of AIGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates

DC Characteristics of AIGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates

Author(s):

Irokawa, Y.

Publication title:

State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-4

Pub. Year:

2003

Page(from):

214

Page(to):

222

Pages:

9

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773492 [1566773490]

Language:

English

Call no.:

E23400/200304

Type:

Conference Proceedings

Details

TDL ID:	ZA00014067
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Symposium on Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors ; Meeting of the Electrochemical Society
Conf. info. (Number):	38th ; 3rd ; 203rd
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.27-2003.05.02

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