In-Line and Non-Destructive Analysis of Epitaxial Si1-x-yGexCx by Spectroscopic Ellipsometry and Comparison with Other Established Techniques

In-Line and Non-Destructive Analysis of Epitaxial Si1-x-yGexCx by Spectroscopic Ellipsometry and Comparison with Other Established Techniques

Author(s):

Lao, R.

Meunier-Beillard, P.

Koumoto, R.Deihougne.T.

Publication title:

Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-3

Pub. Year:

2003

Page(from):

329

Page(to):

338

Pages:

10

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773485 [1566773482]

Language:

English

Call no.:

E23400/200303

Type:

Conference Proceedings

Details

TDL ID:	ZA00014066
Series ID:	PA00000028
Conf. info. (Name):	ALTECH ; Meeting of the Electrochemical Society ; Symposium M1, Diagnostic Techniques for Semiconductor Materials and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	4th (2003) ; 203rd ; 2002 ; 202nd
Conf. info. (Venue):	Paris, France ; Paris, France ; Salt Lake City, UT, USA ; Salt Lake City, UT, USA
Conf. info. (Date):	2003.04.27-2003.05.02 ; 2003.04.27-2003.05.02 ; 2002.10.21-2002.10.25 ; 2002.10.21-2002.10.25

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