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Scaling Issues for Advanced SOI Devices: Gate Oxide Tunneling, Thin Buried Oxide, and Ultra-Thin Films

Author(s):
Pretet, J.
Ohata, A.
Dieudonne, F.
Allibert, F.
Bresson, N.
Matsumoto, T.
Poiroux, T.
Jomaah, J.
Cristoloveanu, S.
4 more
Publication title:
Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-2
Pub. date:
2003
Page(from):
476
Page(to):
487
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773478 [1566773474]
Language:
English
Call no.:
E23400/200302
Type:
Conference Proceedings

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