Predictive Simulation of Void Formation during the Deposition of Silicon Nitride and Silicon Dioxide Films

Predictive Simulation of Void Formation during the Deposition of Silicon Nitride and Silicon Dioxide Films

Author(s):

Publication title:

Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-2

Pub. Year:

2003

Page(from):

356

Page(to):

368

Pages:

13

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773478 [1566773474]

Language:

English

Call no.:

E23400/200302

Type:

Conference Proceedings

Details

TDL ID:	ZA00014065
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Conf. info. (Number):	7th
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.28-2003.05.02

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