Nitrogen Content and Interface Trap Reduction in SiO2/4H-SiC

Nitrogen Content and Interface Trap Reduction in SiO2/4H-SiC

Author(s):

McDonald, K.

Publication title:

Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-2

Pub. Year:

2003

Page(from):

341

Page(to):

347

Pages:

7

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773478 [1566773474]

Language:

English

Call no.:

E23400/200302

Type:

Conference Proceedings

Details

TDL ID:	ZA00014065
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Conf. info. (Number):	7th
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.28-2003.05.02

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