Growth of Si02 at the Sc2O3/Si(100) Interface During Annealing

Growth of Si02 at the Sc2O3/Si(100) Interface During Annealing

Author(s):

Botton, G.A.

Publication title:

Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-2

Pub. Year:

2003

Page(from):

251

Page(to):

261

Pages:

11

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773478 [1566773474]

Language:

English

Call no.:

E23400/200302

Type:

Conference Proceedings

Details

TDL ID:	ZA00014065
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Conf. info. (Number):	7th
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.28-2003.05.02

Similar Items:

1 Conference Proceedings Ultra-Thin Zirconium and Hafnium Silicate Films Deposited by MOCVD on Si(100) D. Landheer, X. Wu, H.-W. Chen, M.-S. Lee, S. Moisa, T.-Y. Huang, T.-S. Chao, Z.H. Lu, W. N. Lennard Electrochemical Society	7 Conference Proceedings Epitaxial growth of Yb2O3 buffer layers on biaxially textured-Ni(100) substrates by Sol-Gel process Chirayil, T. G., Paranthaman, M., Beach, D. B., Morrell, J. S., Sun, E. Y., Goyal, A., Williams, R. K., Lee, D. F., … MRS-Materials Research Society
2 Conference Proceedings INTRINSIC GROWTH STRESS IN THERMALLY GROWN AND ANNEALED SiO2 THIN FILMS: CONTROL OF STRESS-INDUCED ELECTRONICALLY ACTIVE DEFECTS AT Si/SiO2 INTERFACES Bjorkman, C.H., Lee, D.R., Lucovsky, G. Materials Research Society	8 Conference Proceedings Characterization of Gd2O3 Films Deposited on Si(l00) by E-Beam Evaporation from Pressed-Powder Targets Landheer, D., Gupta, J., Hulse, J., Sproule, I., McCaffrey, J., Graham, M., Yang, K.-C., Lu, Z., Lennard, W.N. Electrochemical Society
3 Conference Proceedings Dislocation nucleation, growth and suppression during CW laser annealing of silicon Rozgonyi, G.A., Baumgart, H., Phillipp, F. North Holland	9 Conference Proceedings Microstructure and Current Transport Properties of YBa2Cu3O7-x/(Ba0.05,Sr0.95) TiO3 Multiple-Layer Thin Films Luo, Y., Hughes, R.A., Preston, J.S., Botton, G.A. Materials Research Society
4 Conference Proceedings Temperature Dependence and Annealing Behaviour of Hf Implanted (100)Si: HfSi2 Synthesis Silva, M. R. da, Melo, A. A., Soares, J. C., Silva, M. F. da, Moons, R., Langouche, G., Vantomme, A., Conde, O., Lu, … MRS - Materials Research Society	10 Conference Proceedings Triangular Step Instability and 2D/3D Transition During the Growth of Strained Ge Films on Si(100) Chen, K. M., Jesson, D. E., Pennycook, S. J., Mostoller, M., Kaplan, T., Thundat, T., Warmack, R. J. MRS - Materials Research Society
5 Conference Proceedings Growth of Perovskites with Crystalline Interfaces on Si(100) Norga, G. J., Guiller, A., Marchiori, C., Locquet, J. P., Siegwart, H., Halley, D., Rossel, C., Caimi, D., Seo, J. W., … Materials Research Society	11 Conference Proceedings Microstructure Evolution and Hardness of AlCrFeNi_xMo_0.2 High Entropy Alloy Y. Dong, D.X. Qiao, H.Z. Zhang, Y.P. Lu, T.M. Wang Trans Tech Publications
6 Conference Proceedings REACTION KINETICS OF SPUTTER-DEPOSITED Ti ON Si02 SUBSTRATES DURING RAPID THERMAL ANNEALING Yun, E. J., Chun, H. G., Jung, K., Kwong, D. L., Lee, S. Materials Research Society	12 Conference Proceedings XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal K.Y. Lee, Y.H. Huang, C.F. Huang, C.Y. Chung, S.C. Lin Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12