New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide

New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide

Author(s):

Publication title:

Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-2

Pub. Year:

2003

Page(from):

228

Page(to):

240

Pages:

13

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773478 [1566773474]

Language:

English

Call no.:

E23400/200302

Type:

Conference Proceedings

Details

TDL ID:	ZA00014065
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Conf. info. (Number):	7th
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.28-2003.05.02

Similar Items:

1 Conference Proceedings 35 New Developments in Schottky Source/Drain High-k/Metal Gate CMOS Transistors Li, M.-F., Lee, S., Zhu, S., Li, R., Chen, J., Chin, A., Kwong, D.L. (Invited Paper) Electrochemical Society	7 Conference Proceedings Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly-Si/SiO2 Interface Stress Relaxation Unnikrishnan, S., Kim, B.Y., Wang, C.L., Kwong, D.L., Tasch, A.F. Electrochemical Society
2 Conference Proceedings Process optimization of dual-gate CMOS Liu,I.M., Chen,Y.Y., Connor,C., Joshi,A.B., Kwong,D.L. SPIE-The International Society for Optical Engineering	8 Conference Proceedings 1.3-μm VCSEL production issues Kisker, D.W., Chirovsky, L.M.F., Naone, R.L., Hove, J.M.V., Rossler, J.M., Adamcyk, M., Wasinger, N., Beltran, J.G., … SPIE - The International Society of Optical Engineering
3 Conference Proceedings Materials and processing issues in the development of N2O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications Kim,B.Y., Wristers,D., Kwong,D.L. SPIE-The International Society for Optical Engineering	9 Conference Proceedings Characteristics of Ultra Thin (EOT<1 nm) RTCVD Zr Silicate (Zr 27Si 10O 63) Gate Dielectrics Lee, C.H., Luan, H.F, Bat, W.P., Lee, S.J., Jean, T.S., Roberts, D., Kwong, D.L. Electrochemical Society
4 Conference Proceedings Process Dependence of MOSFET Performance and Reliability with N2O-Based Furnace-Grown Gate Oxides Han, L.K, Wang, H.H., Yoon, G.W., Allman, D., Kwong, D.L. Electrochemical Society	10 Conference Proceedings CMOS Integration Issues with High-K/Metal Gate Stack D. Kwong Electrochemical Society
5 Conference Proceedings Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation Wristers, D., Wang, H.H., Han, L.K., Lin, C., Chen, T.S., Kwong, D.L., Fulford, J. Electrochemical Society	11 Conference Proceedings Integration Issues with High k Gate Stacks* Osburn, C.M., Han, S.K., Kim, I., Campbell, S.A., Garfunkel, E., Gustafson, T., Hauser, J., King, T.-J., Liu, Q., … Electrochemical Society
6 Conference Proceedings Impact of the Nitrogen Concentration of Sub-1.3 nm Gate Oxides on 65 nm Technology Transistor parameters Antônio L. P. Rotondaro, R. T. Laakrsonen, S. P. Singh Electrochemical Society	12 Conference Proceedings Characteristics of BaXSr1-XTiO3 thin films by metallorganic chemical vapor deposition for ultrahigh-density DRAM application Mim,B.W., Roh,J.S., Yan,J., Kwong,D.L. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12