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Characteristics of Metal Gate MOS Capacitor with Hafnium Oxynitride Thin Film

Author(s):
Publication title:
Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-2
Pub. Year:
2003
Page(from):
139
Page(to):
143
Pages:
5
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773478 [1566773474]
Language:
English
Call no.:
E23400/200302
Type:
Conference Proceedings

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