Blank Cover Image

Properties of Ultrathin High-k Dielectrics on Si Probed by Electron Spin Resonance-Active Defects: Interfaces and Interlayers

Author(s):
Publication title:
Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-2
Pub. Year:
2003
Page(from):
66
Page(to):
78
Pages:
13
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773478 [1566773474]
Language:
English
Call no.:
E23400/200302
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-k Dielectric Layers on Silicon

Stesmans, A. L., Afanas'ev, V. V.

Materials Research Society
7 Conference Proceedings Defect Generation in High-K Dielectric Stacks: Characterization and Modelling

M. Houssa, J. L. Autran, V. V. Afanas'ev, A. Stesmans, M. M. Heyns

Electrochemical Society
2 Conference Proceedings Probing Point Defects and Traps in Stacks of Ultrathin Hafnium Oxides on (100) Si by Electron Spin Resonance; Interfaces and N Incorporation

Stesmans, A, Afanas'ev, V. V

Springer
8 Conference Proceedings Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface

Afanas'ev,V.V., Stesmans,A., Harris,C.I.

Trans Tech Publications
3 Conference Proceedings Probing Point Defects in Stacks of Ultrathin High-k Metal Oxides on Semiconductors by Electron Spin Resonance: The Si/HfO₂ vs. the Ge/HfO₂ System

A. Stesmans, V. Afanas'ev, K. Clemer

Electrochemical Society
9 Conference Proceedings SiC/SiO2 Interface States: Properties and Models

Afanas'ev, V. V., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A.

Trans Tech Publications
4 Conference Proceedings Electron spin resonance features of the Pb1 interface defect in thermal(100)Si/SiO2

Stesmans,A., Afanas'ev,V.V.

Trans Tech Publications
10 Conference Proceedings SiC/SiO2 interface defects

Afanas'ev, V. V.

Kluwer Academic Publishers
5 Conference Proceedings Point Defects and Traps in Stacks of Ultrathin High-k Metal Oxides on Si Probed by Electron Spin Resonance: Si/HfO2 System and N Incorporation

Stesmans, A., Afanas'ev, V., Clemer, K., Chen, F., Campbell, S.A.

Electrochemical Society
11 Conference Proceedings Determination of band offsets of Al2O3, ZrO2, HfO2, TiO2, Ta2O5, Nb2O5.

Afanas'ev, Stesmans

Electrochemical Society
6 Conference Proceedings Correlation between development of leakage current and hydrogen ionization in ultrathin silicon dioxide layers

Afanas'ev, V. V., Stesmans, A.

MRS-Materials Research Society
12 Conference Proceedings *Characterization of the Pb1 interface defect in thermal (100)Si/SiO2 by electron spin resonance: 29Si hyperfine structure and electrical relevance

Stesmans, A. L.

MRS-Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12