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Si-SiO2 Interface Trap Properties and Dependence with Oxide Thickness and with Electrical Stress in MOSFETs with Oxides in the 1-2 nm Range

Author(s):
Publication title:
Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2003-2
Pub. Year:
2003
Page(from):
22
Page(to):
38
Pages:
17
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773478 [1566773474]
Language:
English
Call no.:
E23400/200302
Type:
Conference Proceedings

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