Characterization of a Potential Gate Dielectric: MOCVD-Grown Erbium Oxide on Silicon

Characterization of a Potential Gate Dielectric: MOCVD-Grown Erbium Oxide on Silicon

Author(s):

Singh, M.P. ( (Indian Institute of Science) )
Thakur, C.S. ( (Indian Institute of Science) )
Shalini, K. ( (Indian Institute of Science) )
Bhat, N. ( (Indian Institute of Science) )
Shivashankar, S.A. ( (Indian Institute of Science) )

Publication title:

Dielectrics in emerging technologies : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-1

Pub. Year:

2003

Page(from):

358

Page(to):

366

Pages:

9

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773461 [1566773466]

Language:

English

Call no.:

E23400/200301

Type:

Conference Proceedings

Details

TDL ID:	ZA00014064
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Science and Technology of Dielectrics in Emerging Fields
Conf. info. (Number):	1st
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.27-2003.05.02

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