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Gate Dielectrics for Thin Film Transistor of Nanocrystalline Silicon Deposited at 150℃

Author(s):
Publication title:
Thin Film Transistor Technologies VI : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2002-23
Pub. Year:
2002
Page(from):
33
Page(to):
41
Pages:
9
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773850 [1566773857]
Language:
English
Call no.:
E23400/200223
Type:
Conference Proceedings

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