Observation of Ring-OSF Nuclei in As-Grown CZ Silicon Crystals by Highly Selective Reactive Ion Etching

Observation of Ring-OSF Nuclei in As-Grown CZ Silicon Crystals by Highly Selective Reactive Ion Etching

Author(s):

Nakashima, K.

Publication title:

High purity silicon VII : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-20

Pub. Year:

2002

Page(from):

82

Page(to):

90

Pages:

9

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773447 [156677344X]

Language:

English

Call no.:

E23400/200220

Type:

Conference Proceedings

Details

TDL ID:	ZA00014053
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
Conf. info. (Number):	7th ; 202nd
Conf. info. (Venue):	Salt Lake City, Utah, USA
Conf. info. (Date):	2002.10.20-2002.10.25

Similar Items:

1 Conference Proceedings Detection of Oxygen-Related Defects in Silicon Wafers by Highly Selective Reactive Ion Etching Nakashima, K., Watanabe, Y., Yoshida, T., Mitsushima, Y. Electrochemical Society	7 Conference Proceedings CHARACTERIZATION OF DEFECTS IN CZ-GROWN Si CRYSTALS WITH OSF RING Ogushi, Satoshi, Hourai, Masataka, Shigematsu, Tatuhiko Materials Research Society
2 Conference Proceedings Detection of Oxygen-Related Defects in Silicon Wafers by Highly Selective Reactive Ion Etching Nakashima,K., Watanabe,Y., Yoshida,T., Mitsushima,Y. Electrochemical Society, SPIE-The International Society for Optical Engineering	8 Conference Proceedings Formation Behaviour of Grown-in Defects in Silicon During Czochralski Crystal Growth Saishoji, T., Nakamura, K., Nakajima, H., Yokoyama, T., Ishikawa, F., Tomioka, J. Electrochemical Society
3 Conference Proceedings SIMULATION OF THE POINT DEFECT DIFFUSIONAND GROWTH CONDITION FOR DEFECT FREE CZ SILICON CRYSTAL Nakamura, K., Saishoji, T., Tomioka, J. Electrochemical Society	9 Conference Proceedings Diffusion Model of Point Defects in Silicon Crystals During Melt-Growth Nakamura, K., Saishoji, T., Tomioka, J. Electrochemical Society
4 Conference Proceedings SIMULATION OF THE POINT DEFECT DIFFUSIONAND GROWTH CONDITION FOR DEFECT FREE CZ SILICON CRYSTAL Nakamura, K., Saishoji, T., Tomioka, J. Electrochemical Society	10 Conference Proceedings Formation Mechanism of Voids and Oxide Precipitates in Silicon Crystals（Invited Paper） Nakamura, A., Saishoji, T., Tomioka, T. Electrochemical Society
5 Conference Proceedings OBSERVATION OF RING-OSF NUCLEI IN CZ-Si USING SHORT TIME ANNEALING AND IR LIGHT SCATTERING TOMOGRAPHY Marsden, K., Sadamitsu, S., Hourai, M., Sumita, S., Shigematsu, T. Electrochemical Society	11 Conference Proceedings A Vacancy/Oxygen Based Model Describing Radial Distribution of Voids, OSF-Ring, and AOP in Ring Structure of Cz Silicon Crystals Bae, K.-M., Rozgonyi, G., Kim, J.-R., Oh, H.-S. Electrochemical Society
6 Conference Proceedings The Dissolution Behavior of the Void Defects by Hydrogen Annealing in Czochralski Grown Silicon Crystals Nakamura, K., Saishoji, T., Tomioka, T., Katayama, T. Electrochemical Society	12 Conference Proceedings Effect of Shape of Crystal-Melt Interface on Point Defect Reaction in Silicon Crystals Nakamura, K., Maeda, S., Togawa, S., Saishoji, T., Tomioka, J. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12