Measurement of Device Charging Damage in a Dielectric Etch 300 mm Chamber with a Bias Voltage Diagnostic Cathode
- Author(s):
- Publication title:
- Plasma processing XIV : proceedings of the international symposium
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 2002-17
- Pub. Year:
- 2002
- Page(from):
- 191
- Page(to):
- 198
- Pages:
- 8
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773416 [1566773415]
- Language:
- English
- Call no.:
- E23400/200217
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Plasma Charging Damage Performance Assessment with Scaled-up Process from 200 mm to 300 mm Dielectric Etch Chambers
Electrochemical Society |
Electrochemical Society |
2
Conference Proceedings
A Novel Approach to Reduce Via Corner Faceting in the Via-First, No Middle Stop Layer Dual Damascene Trench Etch
Electrochemical Society |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
9
Conference Proceedings
Voltage reduction of organic light-emitting device (OLED) with an n-type organic material and a silver cathode
SPIE - The International Society of Optical Engineering |
MRS - Materials Research Society |
10
Conference Proceedings
The Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power Devices
Trans Tech Publications |
5
Conference Proceedings
Thickness Scaling of Gate Dielectric on Plasma Charging Damage in MOS Devices
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
12
Conference Proceedings
Front-illuminated full-frame charge-coupled-device image sensor achieves 85% peak quantum efficiency
SPIE-The International Society for Optical Engineering |