Thickness Scaling of Gate Dielectric on Plasma Charging Damage in MOS Devices

Thickness Scaling of Gate Dielectric on Plasma Charging Damage in MOS Devices

Author(s):

Publication title:

Plasma processing XIV : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-17

Pub. Year:

2002

Page(from):

170

Page(to):

178

Pages:

9

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773416 [1566773415]

Language:

English

Call no.:

E23400/200217

Type:

Conference Proceedings

Details

TDL ID:	ZA00014050
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Plasma Processing ; Centennial Meeting of the Electrochemical Society
Conf. info. (Number):	14th ; 201st
Conf. info. (Venue):	Philadelphia, PA, USA
Conf. info. (Date):	2002.05.12-2002.05.17

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