Si Epitaxial Growth on Atomic-Order Nitrided Si (100) using an ECR Plasma

Si Epitaxial Growth on Atomic-Order Nitrided Si (100) using an ECR Plasma

Author(s):

Publication title:

Plasma processing XIV : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-17

Pub. Year:

2002

Page(from):

17

Page(to):

24

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773416 [1566773415]

Language:

English

Call no.:

E23400/200217

Type:

Conference Proceedings

Details

TDL ID:	ZA00014050
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Plasma Processing ; Centennial Meeting of the Electrochemical Society
Conf. info. (Number):	14th ; 201st
Conf. info. (Venue):	Philadelphia, PA, USA
Conf. info. (Date):	2002.05.12-2002.05.17

Similar Items:

1 Conference Proceedings Atomic-Order Nitridation of Si By Radical- and Ion-Induced Reactions using an Ultraclean ECR Nitrogen Plasma Seino, T., Matsuura, T., Murota, J. Electrochemical Society	7 Conference Proceedings A Study on B Atomic Layer Formation for B-Doped Si_1-xGe_x(100) Epitaxial Growth Using Ultraclean LPCVD System K. Ishibashi, M. Sakuraba, J. Murota, Y. Inokuchi, Y. Kunii Electrochemical Society
2 Conference Proceedings ATOMIC-LAYER DOPING OF N IN Si EPITAXIAL GROWTH ON Si(100) AND ITS THERMAL SABILITY Jeong, Y., Sakuraba, M., Matsuura, T., Murota, J. Electrochemical Society	8 Conference Proceedings Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si1-xGex Epitaxially Grown on Si(100) M. Sakuraba, R. Ito, T. Seo, J. Murota Electrochemical Society
3 Conference Proceedings ATOMIC-LAYER DOPING OF N IN Si EPITAXIAL GROWTH ON Si(100) AND ITS THERMAL STABILITY Jeong, Y., Sakuraba, M., Matsuura, T., Murota, J. Electrochemical Society	9 Conference Proceedings Atomic-Order Thermal Nitridation of Si1-xGex(100) at Low Temperatures by NH3 N. Akiyama, M. Sakuraba, J. Murota Electrochemical Society
4 Conference Proceedings Atomic-Order Side-Wail Passivation with Nitrogen in ECR Plasma Etching of Si Matsuura, T., Seino, T., Murota, J. Electrochemical Society	10 Conference Proceedings High Quality SilxGex Epitaxial Growth by CVD Murota, J., Sakuraba, M., Matsuura, T. Electrochemical Society
5 Conference Proceedings Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures Watanabe, T., Sakuraba, M., Matsuura, T., Murota, J. Electrochemical Society	11 Conference Proceedings Surface Termination of the Ge(100) and Si(100) Surfaces by Using DHF Solution Dipping Sakuraba, M., Matsuura, T., Murota, J. MRS - Materials Research Society
6 Conference Proceedings Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma Honda, Y., Matsuura, T., Murota, J. Electrochemical Society	12 Conference Proceedings CVD Si1-xGex epitaxial growth and its applications to MOS devices Murota,J., Sakuraba,M., Matsuura,T. SPIE - The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12