Localization, Defect, and Transport Processes in Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition Grown InGaAsN (｀2% N) (Invited)

Localization, Defect, and Transport Processes in Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition Grown InGaAsN (｀2% N) (Invited)

Author(s):

Kurtz, S. R.

Publication title:

State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-14

Pub. Year:

2002

Page(from):

3

Page(to):

10

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773362 [1566773369]

Language:

English

Call no.:

E23400/200214

Type:

Conference Proceedings

Details

TDL ID:	ZA00014048
Series ID:	PA00000028
Conf. info. (Name):	SOTAPOCS ; Narrow Bandgap Optoelectronic Materials and Devices Symposium ; Meeting of the Electrochemical Society
Conf. info. (Number):	37th ; 1st ; 202nd
Conf. info. (Venue):	Salt Lake City, UT, USA
Conf. info. (Date):	2002.10.20-2002.10.25

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