Novel HfSiON Gate Dielectric for Advanced CMOS Devices

Novel HfSiON Gate Dielectric for Advanced CMOS Devices

Author(s):

Colombo, L.

Publication title:

Rapid thermal and other short-time processing technologies III : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-11

Pub. Year:

2002

Page(from):

199

Page(to):

206

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773348 [1566773342]

Language:

English

Call no.:

E23400/200211

Type:

Conference Proceedings

Details

TDL ID:	ZA00014045
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Rapid Thermal and Other Short-Time Processing Technologies ; Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 201st
Conf. info. (Venue):	Philadelphia, Pennsylvania, USA
Conf. info. (Date):	2002.05.13-2002.05.16

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