Behavior of Graded-Channel Fully Depleted SOI NMOSFET at High Temperatures

Behavior of Graded-Channel Fully Depleted SOI NMOSFET at High Temperatures

Author(s):

Publication title:

Microelectronics technology and devices : SBMICRO 2002 : proceedings of the seventeenth international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-8

Pub. Year:

2002

Page(from):

342

Page(to):

350

Pages:

9

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773287 [1566773288]

Language:

English

Call no.:

E23400/2002-8

Type:

Conference Proceedings

Details

TDL ID:	ZA00014042
Series ID:	PA00000028
Conf. info. (Name):	SBMICRO
Conf. info. (Number):	17th (2002)
Conf. info. (Venue):	Porto Alegre, Rio Grande do Sul, Brazil
Conf. info. (Date):	2002.09.09-2002.09.12

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