Blank Cover Image

The Influence of the Interface Trap Densities on the Extraction of the Silicon Film and Front Oxide Thickness of SOI NMOS Devices at Low Temperatures

Author(s):
Publication title:
Microelectronics technology and devices : SBMICRO 2002 : proceedings of the seventeenth international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2002-8
Pub. Year:
2002
Page(from):
28
Page(to):
34
Pages:
7
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773287 [1566773288]
Language:
English
Call no.:
E23400/2002-8
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Influence of the Gate Oxide Tunneling Effect on the Extraction of the Silicon Film and Front Oxide Thickness in SOI NMOSFET

Paiola, A. G., Nicolett, A, S., Martino, J. A.

Electrochemical Society
7 Conference Proceedings Simple Method to Extract the length Dependent Mobility Degradation Factor at 77 K

Nicolett, A.S., Martino, J.A., Simoen, E., Claeys, C.

Electrochemical Society
2 Conference Proceedings Theoretical and Experimental Study of the Front and Back Interface Trap Density in Accumulation-Mode SOI MOSFETs

Martino, J.A., Simoen, E., Claeys, C.

Electrochemical Society
8 Conference Proceedings Determination of the Silicon Film Doping Concentration and the Back Interface Oxide Charge Density using SOI-NMOS Gate Capacitor

Sonnenberg, V., Martino, J.A.

Electrochemical Society
3 Conference Proceedings Influence of the Back Gate Voltage on the Total Series Resistance of Fully Depleted SOI MOSFETS at 300 K and 77 K

Nicolett, A.S., Martino, J.A., Simoen, E., Claeys, C.

Electrochemical Society
9 Conference Proceedings Evaluation of the Channel Engineering Impact on the Analog Performance of Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures

Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C.

Electrochemical Society
4 Conference Proceedings Temperature and Oxide Thickness Influence on the Generation Lifetime Determination in Partially Depleted SOI NMOSFETs

Galeti, M., Martino, J. A., Simoen, E., Claeys, C.

Electrochemical Society
10 Conference Proceedings HALO Effects on 0.13 μm Floating-Body Partially Depleted SOI n-MOSFETs iII Low Temperature Operation

J. A. Martino, M. A. Pavanello, E. Simoen, C. Claeys

Electrochemical Society
5 Conference Proceedings Detcrmination of the Silicon Film Thickness and Back Oxide Charge Density on Graded- Channel SOI oMOSFETs

Nicolett, A.S., Martino, J.A., Pavanello, M.A.

Electrochemical Society
11 Conference Proceedings The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs

Camillo, L.M., Martino, J.A., Simoen, E., Claeys, C.

Electrochemical Society
6 Conference Proceedings Extraction of the interface and oxide charge density in SOI MOSFETs

Simoen, E, Claeys, C, Lukyanchikotva, N, Petrichuk, M, Garbar, N, Martino, J A, Sonnenberg, V

Electrochemical Society
12 Conference Proceedings The Impact of the Gate Oxide Thickness Reduction on the Gate Induced Floating Body Effect in SOI nMOSFETs

P. G. DerAgopian, J. A. Martino, E. Simoen, C. Claeys

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12