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Determination of the Silicon Film Doping Concentration and the Back Interface Oxide Charge Density using SOI-NMOS Gate Capacitor

Author(s):
Publication title:
Microelectronics technology and devices : SBMICRO 2002 : proceedings of the seventeenth international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2002-8
Pub. Year:
2002
Page(from):
2
Page(to):
11
Pages:
10
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773287 [1566773288]
Language:
English
Call no.:
E23400/2002-8
Type:
Conference Proceedings

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