Kinetics of AlxGa1-xAs Oxidation Layer by Capacitance- Voltage Technique*

Kinetics of AlxGa1-xAs Oxidation Layer by Capacitance- Voltage Technique*

Author(s):

Dang, G.

Publication title:

State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-3

Pub. Year:

2002

Page(from):

225

Page(to):

231

Pages:

7

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773690 [1566773695]

Language:

English

Call no.:

E23400/2002-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00014037
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-art program on compound semiconductors ; Wide bandgap semiconductors for photonic and electronic devices and sensors
Conf. info. (Number):	36th ; 2nd
Conf. info. (Venue):	Philadelphia, PA, USA
Conf. info. (Date):	2002.05.12-2002.05.17

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